Modeling recombination and contact resistance of poly-Si junctions
- authored by
- Nils Folchert, Robby Peibst, Rolf Brendel
- Abstract
We present a semi-analytical model for the calculation of the current through and the recombination in carrier-selective junctions consisting of a poly-Si/SiOx/c-Si layer stack. We calculate the recombination parameter J0 and the contact resistance ρC after solving the band-bending-problem on both sides of the interfacial oxide. Comparisons with finite-element simulations show that the current calculation is reliable at all bias conditions except for inversion and that current through pinholes is resolved adequately in the model. The model allows a coherent description of lifetime-, current-voltage- and capacitance-voltage measurements performed on a sample with dominant tunneling. We use our model to investigate the influence of oxide thickness and pinhole density on J0 and ρC of our state-of-the-art poly-silicon-on-oxide (POLO) junctions and demonstrate its usefulness for the optimization of poly-Si based junctions.
- Organisation(s)
-
Institute of Electronic Materials and Devices
Institute of Solid State Physics
- External Organisation(s)
-
Institute for Solar Energy Research (ISFH)
- Type
- Article
- Journal
- Progress in Photovoltaics: Research and Applications
- Volume
- 28
- Pages
- 1289-1307
- No. of pages
- 19
- ISSN
- 1062-7995
- Publication date
- 27.11.2020
- Publication status
- Published
- Peer reviewed
- Yes
- ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials, Renewable Energy, Sustainability and the Environment, Condensed Matter Physics, Electrical and Electronic Engineering
- Sustainable Development Goals
- SDG 7 - Affordable and Clean Energy
- Electronic version(s)
-
https://doi.org/10.1002/pip.3327 (Access:
Closed)
