Autodiffused boron emitter for n-type monocrystalline SI thin-film solar cells
- authored by
- Andreas Wolf, Barbara Terheiden, Rolf Brendel
- Abstract
The generation of an emitter in monocrystalline silicon thin-film solar cells by out-diffusion of dopant atoms from the growth substrate into the epitaxial layer is demonstrated. Starting with a boron-doped p+-type substrate, a porous silicon surface layer is created to permit the layer transfer (PSI process). A p+-type emitter automatically forms by out-diffusion of boron atoms during the epitaxial growth of n-type silicon films. This "autodiffusion" process creates an emitter with a moderate surface concentration of 3×1018 cm-3 and a junction depth of 1.1 μm. The sheet resistance is 330 Ω/□. n-type thin-film solar cells with an autodiffused boron emitter on the rear side of the cells are fabricated. An independently confirmed energy conversion efficiency of 14.5 % with a short circuit current density of 33.3 mA/cm2 as measured under standard testing conditions is achieved for a 4 cm2 large cell with a thickness of 24 μm.
- External Organisation(s)
-
Institute for Solar Energy Research (ISFH)
- Type
- Conference contribution
- Pages
- 992-995
- No. of pages
- 4
- Publication date
- 2006
- Publication status
- Published
- Peer reviewed
- Yes
- ASJC Scopus subject areas
- Renewable Energy, Sustainability and the Environment, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Materials Chemistry
- Sustainable Development Goals
- SDG 7 - Affordable and Clean Energy
- Electronic version(s)
-
https://doi.org/10.1109/WCPEC.2006.279285 (Access:
Closed)