Autodiffused boron emitter for n-type monocrystalline SI thin-film solar cells

authored by
Andreas Wolf, Barbara Terheiden, Rolf Brendel
Abstract

The generation of an emitter in monocrystalline silicon thin-film solar cells by out-diffusion of dopant atoms from the growth substrate into the epitaxial layer is demonstrated. Starting with a boron-doped p+-type substrate, a porous silicon surface layer is created to permit the layer transfer (PSI process). A p+-type emitter automatically forms by out-diffusion of boron atoms during the epitaxial growth of n-type silicon films. This "autodiffusion" process creates an emitter with a moderate surface concentration of 3×1018 cm-3 and a junction depth of 1.1 μm. The sheet resistance is 330 Ω/□. n-type thin-film solar cells with an autodiffused boron emitter on the rear side of the cells are fabricated. An independently confirmed energy conversion efficiency of 14.5 % with a short circuit current density of 33.3 mA/cm2 as measured under standard testing conditions is achieved for a 4 cm2 large cell with a thickness of 24 μm.

External Organisation(s)
Institute for Solar Energy Research (ISFH)
Type
Conference contribution
Pages
992-995
No. of pages
4
Publication date
2006
Publication status
Published
Peer reviewed
Yes
ASJC Scopus subject areas
Renewable Energy, Sustainability and the Environment, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Materials Chemistry
Sustainable Development Goals
SDG 7 - Affordable and Clean Energy
Electronic version(s)
https://doi.org/10.1109/WCPEC.2006.279285 (Access: Closed)