Autodiffused boron emitter for n-type monocrystalline SI thin-film solar cells

verfasst von
Andreas Wolf, Barbara Terheiden, Rolf Brendel
Abstract

The generation of an emitter in monocrystalline silicon thin-film solar cells by out-diffusion of dopant atoms from the growth substrate into the epitaxial layer is demonstrated. Starting with a boron-doped p+-type substrate, a porous silicon surface layer is created to permit the layer transfer (PSI process). A p+-type emitter automatically forms by out-diffusion of boron atoms during the epitaxial growth of n-type silicon films. This "autodiffusion" process creates an emitter with a moderate surface concentration of 3×1018 cm-3 and a junction depth of 1.1 μm. The sheet resistance is 330 Ω/□. n-type thin-film solar cells with an autodiffused boron emitter on the rear side of the cells are fabricated. An independently confirmed energy conversion efficiency of 14.5 % with a short circuit current density of 33.3 mA/cm2 as measured under standard testing conditions is achieved for a 4 cm2 large cell with a thickness of 24 μm.

Externe Organisation(en)
Institut für Solarenergieforschung GmbH (ISFH)
Typ
Aufsatz in Konferenzband
Seiten
992-995
Anzahl der Seiten
4
Publikationsdatum
2006
Publikationsstatus
Veröffentlicht
Peer-reviewed
Ja
ASJC Scopus Sachgebiete
Erneuerbare Energien, Nachhaltigkeit und Umwelt, Elektrotechnik und Elektronik, Elektronische, optische und magnetische Materialien, Werkstoffchemie
Ziele für nachhaltige Entwicklung
SDG 7 – Erschwingliche und saubere Energie
Elektronische Version(en)
https://doi.org/10.1109/WCPEC.2006.279285 (Zugang: Geschlossen)