Autodiffused boron emitter for n-type monocrystalline SI thin-film solar cells
- verfasst von
- Andreas Wolf, Barbara Terheiden, Rolf Brendel
- Abstract
The generation of an emitter in monocrystalline silicon thin-film solar cells by out-diffusion of dopant atoms from the growth substrate into the epitaxial layer is demonstrated. Starting with a boron-doped p+-type substrate, a porous silicon surface layer is created to permit the layer transfer (PSI process). A p+-type emitter automatically forms by out-diffusion of boron atoms during the epitaxial growth of n-type silicon films. This "autodiffusion" process creates an emitter with a moderate surface concentration of 3×1018 cm-3 and a junction depth of 1.1 μm. The sheet resistance is 330 Ω/□. n-type thin-film solar cells with an autodiffused boron emitter on the rear side of the cells are fabricated. An independently confirmed energy conversion efficiency of 14.5 % with a short circuit current density of 33.3 mA/cm2 as measured under standard testing conditions is achieved for a 4 cm2 large cell with a thickness of 24 μm.
- Externe Organisation(en)
-
Institut für Solarenergieforschung GmbH (ISFH)
- Typ
- Aufsatz in Konferenzband
- Seiten
- 992-995
- Anzahl der Seiten
- 4
- Publikationsdatum
- 2006
- Publikationsstatus
- Veröffentlicht
- Peer-reviewed
- Ja
- ASJC Scopus Sachgebiete
- Erneuerbare Energien, Nachhaltigkeit und Umwelt, Elektrotechnik und Elektronik, Elektronische, optische und magnetische Materialien, Werkstoffchemie
- Ziele für nachhaltige Entwicklung
- SDG 7 – Erschwingliche und saubere Energie
- Elektronische Version(en)
-
https://doi.org/10.1109/WCPEC.2006.279285 (Zugang:
Geschlossen)
