Ion Implantation of As, P, B, BF and BF₂ on Planar and Alkaline-Textured Si(001) Surfaces for Photovoltaic Applications

authored by

Jan Krügener, Fabian Kiefer, Robby Peibst, H. Jörg Osten

Abstract

We compare the electrical behavior of different dopant species (As, P, B, BF, BF₂) on solar-relevant surfaces (alkaline textured and planar). We find significant differences when substituting B by BF or BF₂ as well as when using As instead of P. For the latter equivalent recombination behavior is observed, whereas the sheet resistance is higher when using As. The use of F containing p-type species leads to an increase in sheet resistance and saturation current density.

Organisation(s)

Institute of Electronic Materials and Devices

External Organisation(s)

Institute for Solar Energy Research (ISFH)

Type

Conference contribution

Pages

90-93

No. of pages

4

Publication date

09.2018

Publication status

Published

Peer reviewed

Yes

ASJC Scopus subject areas

Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Condensed Matter Physics

Sustainable Development Goals

SDG 7 - Affordable and Clean Energy

Electronic version(s)

https://doi.org/10.1109/iit.2018.8807962 (Access: Closed)