Extended Cox & Strack analysis for the contact resistance of planar samples with carrier-selective junctions on both sides
- authored by
- Nils Folchert, Rolf Brendel
- Abstract
We review the famous Cox & Strack equation that is commonly applied in contact resistance measurements of samples with a negligible contact resistance at the sample backside. We apply geometric interpretations to extend the Cox & Strack model a) to samples that have a non-negligible contact resistance not only on the front- but also on the back-side and b) to junctions with a buried contact resistance underneath a conductive layer. Case a) is for example a symmetric sample with a single material junction on both sample surfaces. Case b) could be a poly-Si/SiOx/c-Si or a-Si/c-Si hetero-junction. We compare our analytic treatment with rigorous finite-element simulations and find a relative agreement between 2.5 % and 36 % depending on the sample geometry and resistance values. We apply the method to analyze the contact resistance of lifetime samples with both-sided n+/n-type poly-Si junctions.
- Organisation(s)
-
Institute of Solid State Physics
- External Organisation(s)
-
Institute for Solar Energy Research (ISFH)
- Type
- Article
- Journal
- Solar Energy Materials and Solar Cells
- Volume
- 231
- ISSN
- 0927-0248
- Publication date
- 10.2021
- Publication status
- Published
- Peer reviewed
- Yes
- ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials, Renewable Energy, Sustainability and the Environment, Surfaces, Coatings and Films
- Sustainable Development Goals
- SDG 7 - Affordable and Clean Energy
- Electronic version(s)
-
https://doi.org/10.1016/j.solmat.2021.111304 (Access:
Closed)
