Impact of GaN-HEMT Combinations with Different Die-Size on the Efficiency of a Single-Phase Photovoltaic Differential Buck Inverter
- authored by
- Tobias Brinker, Philipp Mand, Jens Friebe
- Abstract
In transformerless single-phase photovoltaic (PV) power systems, leakage currents are a well-known issue, as these can cause electromagnetic interference (EMI) problems, which are limited by standards. To prevent this, two hybrid unipolar modulation techniques with only constant or grid-frequency common mode (cm) voltage variations have been identified for a differential buck inverter. Each of these modulation schemes causes a different, asymmetric switching- and conduction loss distribution between high- and low-side transistors. Therefore, a selection of transistors with different die-sizes for high-side and low-side transistors appears to be advantageous regarding various factors, such as inverter efficiency, total die-size, and heat distribution. The objective of this paper is to investigate the effect of different high-side and low-side transistor combinations on the total loss and to identify beneficial combinations within a product line of GaN-HEMTs.
- Organisation(s)
-
Institute of Drive Systems and Power Electronics
Power Electronics and Drive Control Section
- Type
- Conference contribution
- Publication date
- 2022
- Publication status
- Published
- Peer reviewed
- Yes
- ASJC Scopus subject areas
- Electrical and Electronic Engineering, Mechanical Engineering, Safety, Risk, Reliability and Quality, Energy Engineering and Power Technology, Renewable Energy, Sustainability and the Environment, Control and Optimization
- Sustainable Development Goals
- SDG 7 - Affordable and Clean Energy
- Electronic version(s)
-
https://doi.org/10.1109/ECCE50734.2022.9947778 (Access:
Closed)