Impact of GaN-HEMT Combinations with Different Die-Size on the Efficiency of a Single-Phase Photovoltaic Differential Buck Inverter

authored by
Tobias Brinker, Philipp Mand, Jens Friebe
Abstract

In transformerless single-phase photovoltaic (PV) power systems, leakage currents are a well-known issue, as these can cause electromagnetic interference (EMI) problems, which are limited by standards. To prevent this, two hybrid unipolar modulation techniques with only constant or grid-frequency common mode (cm) voltage variations have been identified for a differential buck inverter. Each of these modulation schemes causes a different, asymmetric switching- and conduction loss distribution between high- and low-side transistors. Therefore, a selection of transistors with different die-sizes for high-side and low-side transistors appears to be advantageous regarding various factors, such as inverter efficiency, total die-size, and heat distribution. The objective of this paper is to investigate the effect of different high-side and low-side transistor combinations on the total loss and to identify beneficial combinations within a product line of GaN-HEMTs.

Organisation(s)
Institute of Drive Systems and Power Electronics
Power Electronics and Drive Control Section
Type
Conference contribution
Publication date
2022
Publication status
Published
Peer reviewed
Yes
ASJC Scopus subject areas
Electrical and Electronic Engineering, Mechanical Engineering, Safety, Risk, Reliability and Quality, Energy Engineering and Power Technology, Renewable Energy, Sustainability and the Environment, Control and Optimization
Sustainable Development Goals
SDG 7 - Affordable and Clean Energy
Electronic version(s)
https://doi.org/10.1109/ECCE50734.2022.9947778 (Access: Closed)