Impact of GaN-HEMT Combinations with Different Die-Size on the Efficiency of a Single-Phase Photovoltaic Differential Buck Inverter

verfasst von

Tobias Brinker, Philipp Mand, Jens Friebe

Abstract

In transformerless single-phase photovoltaic (PV) power systems, leakage currents are a well-known issue, as these can cause electromagnetic interference (EMI) problems, which are limited by standards. To prevent this, two hybrid unipolar modulation techniques with only constant or grid-frequency common mode (cm) voltage variations have been identified for a differential buck inverter. Each of these modulation schemes causes a different, asymmetric switching- and conduction loss distribution between high- and low-side transistors. Therefore, a selection of transistors with different die-sizes for high-side and low-side transistors appears to be advantageous regarding various factors, such as inverter efficiency, total die-size, and heat distribution. The objective of this paper is to investigate the effect of different high-side and low-side transistor combinations on the total loss and to identify beneficial combinations within a product line of GaN-HEMTs.

Organisationseinheit(en)

Institut für Antriebssysteme und Leistungselektronik
Fachgebiet Leistungselektronik und Antriebsregelung

Typ

Aufsatz in Konferenzband

Publikationsdatum

2022

Publikationsstatus

Veröffentlicht

Peer-reviewed

Ja

ASJC Scopus Sachgebiete

Elektrotechnik und Elektronik, Maschinenbau, Sicherheit, Risiko, Zuverlässigkeit und Qualität, Energieanlagenbau und Kraftwerkstechnik, Erneuerbare Energien, Nachhaltigkeit und Umwelt, Steuerung und Optimierung

Ziele für nachhaltige Entwicklung

SDG 7 – Erschwingliche und saubere Energie

Elektronische Version(en)

https://doi.org/10.1109/ECCE50734.2022.9947778 (Zugang: Geschlossen)