Transferring the Record p-type Si POLO-IBC Cell Technology Towards an Industrial Level
- authored by
- Felix Haase, Christina Hollemann, Soren Schafer, Jan Krügener, Rolf Brendel, Robby Peibst
- Abstract
We report on the transfer of our lab-type POLO2-IBC process with POLO contacts for both polarities towards an industrial level. Here we demonstrate a shortened cell fabrication process that uses p-type wafers and keeps the Al-back surface field of the PERC process but substitutes the phosphorous diffusion by a n-type poly-Si deposition. The resulting POLO-IBC process is similarly short as the PERC process. A high lifetime with the Cz material and highly selective POLO junctions require a reduce thermal budget and a reduced thickness of the interfacial oxide compared to our previous lab cells that used FZ silicon wafers. Our POLO-IBC cells have an efficiency potential of 24.5 % as deduced from simulations. We measure an efficiency of 21.8 % after finishing the first cell batch. For a cell from our second cell batch with improved passivation we measure an implied pseudo efficiency of 25.2 % before laser contact openings.
- Organisation(s)
-
Institute of Electronic Materials and Devices
Laboratory of Nano and Quantum Engineering
Institute of Solid State Physics
- External Organisation(s)
-
Institute for Solar Energy Research (ISFH)
- Type
- Conference contribution
- Pages
- 2200-2206
- No. of pages
- 7
- Publication date
- 06.2019
- Publication status
- Published
- Peer reviewed
- Yes
- ASJC Scopus subject areas
- Control and Systems Engineering, Industrial and Manufacturing Engineering, Electrical and Electronic Engineering
- Sustainable Development Goals
- SDG 7 - Affordable and Clean Energy
- Electronic version(s)
-
https://doi.org/10.1109/pvsc40753.2019.8980960 (Access:
Closed)
