Comparison of the open circuit voltage of simplified PERC cells passivated with PECVD silicon nitride and thermal silicon oxide

Authored by

Mark Kerr, Jan Schmidt, Andres Cuevas

Abstract

Plasma enhanced chemical vapor deposited silicon nitride films have been used to passivate both the front and rear surface of simplified PERC silicon solar cells (planar surface, single-step emitter). An independently confirmed open circuit voltage (V_oc) of 667 mV was measured, proving the outstanding surface passivation provided by the silicon nitride films. The achieved V_oc represents a significant improvement for all-SiN passivated silicon solar cells. A conversion efficiency of 17.8% was obtained. For comparison, similar cells with different passivation schemes, including high quality, thermally grown TCA oxides and thin SiO₂/SiN double layers, were also investigated. Open circuit voltages up to 673 mV and conversion efficiencies up to 18.3% were achieved.

Details

External Organisation(s): Australian National University
Type: Article
Journal: Progress in Photovoltaics: Research and Applications
Volume: 8
Pages: 529-536
No. of pages: 8
ISSN: 1062-7995
Publication date: 02.11.2000
Publication status: Published
Peer reviewed: Yes
ASJC Scopus subject areas: Electronic, Optical and Magnetic Materials, Renewable Energy, Sustainability and the Environment, Condensed Matter Physics, Electrical and Electronic Engineering
Sustainable Development Goals: SDG 7 - Affordable and Clean Energy
Electronic version(s): https://doi.org/10.1002/1099-159X(200009/10)8:5<529::AID-PIP334>3.0.CO;2-6 (Access: Closed )