Comparison of the open circuit voltage of simplified PERC cells passivated with PECVD silicon nitride and thermal silicon oxide
- verfasst von
- Mark Kerr, Jan Schmidt, Andres Cuevas
- Abstract
Plasma enhanced chemical vapor deposited silicon nitride films have been used to passivate both the front and rear surface of simplified PERC silicon solar cells (planar surface, single-step emitter). An independently confirmed open circuit voltage (Voc) of 667 mV was measured, proving the outstanding surface passivation provided by the silicon nitride films. The achieved Voc represents a significant improvement for all-SiN passivated silicon solar cells. A conversion efficiency of 17.8% was obtained. For comparison, similar cells with different passivation schemes, including high quality, thermally grown TCA oxides and thin SiO2/SiN double layers, were also investigated. Open circuit voltages up to 673 mV and conversion efficiencies up to 18.3% were achieved.
- Externe Organisation(en)
-
Australian National University
- Typ
- Artikel
- Journal
- Progress in Photovoltaics: Research and Applications
- Band
- 8
- Seiten
- 529-536
- Anzahl der Seiten
- 8
- ISSN
- 1062-7995
- Publikationsdatum
- 02.11.2000
- Publikationsstatus
- Veröffentlicht
- Peer-reviewed
- Ja
- ASJC Scopus Sachgebiete
- Elektronische, optische und magnetische Materialien, Erneuerbare Energien, Nachhaltigkeit und Umwelt, Physik der kondensierten Materie, Elektrotechnik und Elektronik
- Ziele für nachhaltige Entwicklung
- SDG 7 – Erschwingliche und saubere Energie
- Elektronische Version(en)
-
https://doi.org/10.1002/1099-159X(200009/10)8:5<529::AID-PIP334>3.0.CO;2-6 (Zugang:
Geschlossen)
