Using of EM fields during industrial CZ and FZ large silicon crystal growth

authored by

Alfred Mühlbauer, Andris Muiznieks, Gundars Ratnieks, Armands Krauze, Georg Raming, Thomas Wetzel

Abstract

The paper describes numerical simulation tools for electromagnetic (EM), hydrodynamic, temperature and concentration fields in industrial Czochralski (CZ) and floating zone (FZ) single silicon crystal growth facilities under the influence of several alternating current (AC) and static DC magnetic fields. Such fields are expected to provide additional means to influence the melt behaviour, especially in the industrial growth of large diameter (200-300 mm) silicon crystals. The simulation tools are based on axisymmetric 2D models for (1) AC and DC magnetic fields in the whole crystal growth facility and (2) hydrodynamics, temperature and mass transport in the melt under the influence of the EM fields. The simulation tools are verified by comparison to temperature and velocity measurements in a laboratory CZ set-up with eutectics InGaSn model melt and to resistivity measurements in grown silicon crystals.

Organisation(s)

Institute of Electrothermic Process Engineering

External Organisation(s)

Siltronic AG

Type

Article

Journal

COMPEL - The International Journal for Computation and Mathematics in Electrical and Electronic Engineering

Volume

22

Pages

123-133

No. of pages

11

ISSN

0332-1649

Publication date

01.03.2003

Publication status

Published

Peer reviewed

Yes

ASJC Scopus subject areas

Computer Science Applications, Computational Theory and Mathematics, Electrical and Electronic Engineering, Applied Mathematics

Sustainable Development Goals

SDG 9 - Industry, Innovation, and Infrastructure

Electronic version(s)

https://doi.org/10.1108/03321640310452222 (Access: Closed)