Surface-mediated electrical transport in single GaAs nanowires

verfasst von

Ilio Miccoli, Frederik Edler, Herbert Pfnür, Christoph Tegenkamp, Paola Prete, Nico Lovergine

Abstract

III-V semiconductor compound based nanowires (NWs) are expected to impact the fields of nano-electronic, nano-photonic, and photovoltaic devices. Self-assembly of crystal-phase controlled and high optical quality III-V NWs has been demonstrated. However, important physical and technological issues, such as carrier transport properties and reproducible incorporation of high dopant concentrations in NW materials, remain to be addressed for enabling robust nano-devices fabrication. In this work, we show the use of a multi-probe scanning tunneling microscope for the rapid electrical characterization of free-standing GaAs NWs, without any need for post-growth sample processing and contact fabrication. In particular, 2-probe I-V measurements were performed along the axis of a single 60-nm diameter unpassivated GaAs NW, and its resistance profile determined, obtaining high (in the range of GΩ) resistance values. Due to its reduced radial dimension, the NW is expected to be completely depleted. Analysis of the NW resistance profile reveals instead, that carrier transport is mediated by the NW surface states. Finally, by using the substrate as a reference electrode and placing the other three STM-tips along the NWs, we demonstrate a 4-point probe geometry that can be used for the electrical characterization of highly doped NWs.

Organisationseinheit(en)

Abt. Atomare und molekulare Strukturen (ATMOS)
Institut für Festkörperphysik

Externe Organisation(en)

University of Salento
Consiglio Nazionale delle Ricerche (CNR)

Typ

Aufsatz in Konferenzband

Seiten

136-140

Anzahl der Seiten

5

Publikationsdatum

03.08.2018

Publikationsstatus

Veröffentlicht

Peer-reviewed

Ja

ASJC Scopus Sachgebiete

Elektronische, optische und magnetische Materialien, Instrumentierung

Ziele für nachhaltige Entwicklung

SDG 7 – Erschwingliche und saubere Energie

Elektronische Version(en)

https://doi.org/10.1109/nanofim.2015.8425344 (Zugang: Geschlossen)