20.1%-efficient crystalline silicon solar cell with amorphous silicon rear-surface passivation

verfasst von

Martin Schaper, Jan Schmidt, Heiko Plagwitz, Rolf Brendel

Abstract

We have developed a crystalline silicon solar cell with amorphous silicon (a-Si:H) rear-surface passivation based on a simple process. The a-Si:H layer is deposited at 225°C by plasma-enhanced chemical vapor deposition. An aluminum grid is evaporated onto the a-Si:H-passivated rear. The base contacts are formed by COSIMA (contact formation to a-Si:H passivated wafers by means of annealing) when subsequently depositing the front silicon nitride layer at 325°C. The a-Si:H underneath the aluminum fingers dissolves completely within the aluminum and an ohmic contact to the base is formed. This contacting scheme results in a very low contact resistance of 3.5±0-2mΩcm ² on low-resistivity (0-5 Ωcm) p-type silicon, which is below that obtained for conventional Al/Si contacts. We achieve an independently confirmed energy conversion efficiency of 20-1% under one-sun standard testing conditions for a 4cm² large cell. Measurements of the internal quantum efficiency show an improved rear surface passivation compared with reference cells with a silicon nitride rear passivation.

Externe Organisation(en)

Institut für Solarenergieforschung GmbH (ISFH)

Typ

Artikel

Journal

Progress in Photovoltaics: Research and Applications

Band

13

Seiten

381-386

Anzahl der Seiten

6

ISSN

1062-7995

Publikationsdatum

27.06.2005

Publikationsstatus

Veröffentlicht

Peer-reviewed

Ja

ASJC Scopus Sachgebiete

Elektronische, optische und magnetische Materialien, Erneuerbare Energien, Nachhaltigkeit und Umwelt, Physik der kondensierten Materie, Elektrotechnik und Elektronik

Ziele für nachhaltige Entwicklung

SDG 7 – Erschwingliche und saubere Energie

Elektronische Version(en)

https://doi.org/10.1002/pip.641 (Zugang: Geschlossen)