Recombination via point defects and their complexes in solar silicon

verfasst von
A. R. Peaker, V. P. Markevich, B. Hamilton, G. Parada, A. Dudas, A. Pap, E. Don, B. Lim, J. Schmidt, L. Yu, Y. Yoon, G. Rozgonyi
Abstract

Electronic grade Czochralski and float zone silicon in the as grown state have a very low concentration of recombination generation centers (typically <10 10 cm -3). Consequently, in integrated circuit technologies using such material, electrically active inadvertent impurities and structural defects are rarely detectable. The quest for cheap photovoltaic cells has led to the use of less pure silicon, multi-crystalline material, and low cost processing for solar applications. Cells made in this way have significant extrinsic recombination mechanisms. In this paper we review recombination involving defects and impurities in single crystal and in multi-crystalline solar silicon. Our main techniques for this work are recombination lifetime mapping measurements using microwave detected photoconductivity decay and variants of deep level transient spectroscopy (DLTS). In particular, we use Laplace DLTS to distinguish between isolated point defects, small precipitate complexes and decorated extended defects. We compare the behavior of some common metallic contaminants in solar silicon in relation to their effect on carrier lifetime and cell efficiency. Finally, we consider the role of hydrogen passivation in relation to transition metal contaminants, grain boundaries and dislocations. We conclude that recombination via point defects can be significant but in most multi-crystalline material the dominant recombination path is via decorated dislocation clusters within grains with little contribution to the overall recombination from grain boundaries. Achieving high efficiency in low cost silicon solar cells is a key goal in the quest for effective renewable energy sources. In this Feature Article the authors have studied the recombination process in solar silicon involving defects and impurities which degrade the cell efficiency. Lifetime mapping measurement using microwave detected photoconductivity decay shows that the parasitic recombination is concentrated in specific regions of multi-crystalline ingots. Localised Laplace Deep Level Transient Spectroscopy has been used to distinguish isolated point defects, small precipitate complexes and decorated extended defects. It is concluded that in most multi-crystalline materials the dominant recombination path is via decorated dislocation clusters within grains with little contribution to the overall recombination from grain boundaries.

Externe Organisation(en)
University of Manchester
Semilab Semiconductor Physics Laboratory Co. Ltd.
Semimetrics Ltd
Institut für Solarenergieforschung GmbH (ISFH)
North Carolina State University
Typ
Artikel
Journal
Physica Status Solidi (A) Applications and Materials Science
Band
209
Seiten
1884-1893
Anzahl der Seiten
10
ISSN
1862-6300
Publikationsdatum
10.2012
Publikationsstatus
Veröffentlicht
Peer-reviewed
Ja
ASJC Scopus Sachgebiete
Elektronische, optische und magnetische Materialien, Physik der kondensierten Materie, Oberflächen und Grenzflächen, Oberflächen, Beschichtungen und Folien, Elektrotechnik und Elektronik, Werkstoffchemie
Ziele für nachhaltige Entwicklung
SDG 7 – Erschwingliche und saubere Energie
Elektronische Version(en)
https://doi.org/10.1002/pssa.201200216 (Zugang: Unbekannt)