26%-efficient and 2 cm narrow interdigitated back contact silicon solar cells with passivated slits on two edges

verfasst von
S. Schäfer, Felix Haase, Christina Hollemann, J. Hensen, Jan Krügener, Rolf Brendel, Robby Peibst
Abstract

Perimeter recombination is a relevant loss mechanism, in particular for cells with a large perimeter-to-area ratio and with poorly passivated edges, e.g., cut or cleaved solar cells for shingled modules. We experimentally demonstrate that cut edges can be well passivated during front-end processing. The resulting cells have an efficiency of 26%. The designated cell area of our lab-type highly efficient cells is smaller than the total area of the wafer. This causes recombination losses in the masked perimeter region. We separate the active cell area from the wafer on two sides of the cell by slits to reduce the transport of carriers into the perimeter region. We apply a diffusion model to describe impact of the slits on the perimeter recombination. The slits have an effective surface recombination velocity of down to 9 cm/s, depending on the resistivity of the base. For a base resistivity of 80 Ωcm, the average cell efficiency increases by 0.7 %abs as compared to embedded cells and by 2.3 %abs as compared to laser-cut cells due to the passivated slits.

Organisationseinheit(en)
Institut für Materialien und Bauelemente der Elektronik
Laboratorium für Nano- und Quantenengineering
Institut für Festkörperphysik
Externe Organisation(en)
Institut für Solarenergieforschung GmbH (ISFH)
Typ
Artikel
Journal
Solar Energy Materials and Solar Cells
Band
200
ISSN
0927-0248
Publikationsdatum
15.09.2019
Publikationsstatus
Veröffentlicht
Peer-reviewed
Ja
ASJC Scopus Sachgebiete
Elektronische, optische und magnetische Materialien, Erneuerbare Energien, Nachhaltigkeit und Umwelt, Oberflächen, Beschichtungen und Folien
Ziele für nachhaltige Entwicklung
SDG 7 – Erschwingliche und saubere Energie
Elektronische Version(en)
https://doi.org/10.1016/j.solmat.2019.110021 (Zugang: Geschlossen)