In-situ characterization of electron-assisted regeneration of Cz-Si solar cells

verfasst von

L. Helmich, D.C. Walter, D. Bredemeier, R. Falster, V.V. Voronkov, Jan Schmidt

Abstract

We examine the regeneration kinetics of passivated emitter and rear solar cells (PERCs) fabricated on boron-doped p-type Czochralski-grown silicon wafers in darkness by electron injection via application of a forward bias voltage at elevated temperature (140 °C) in order to discriminate between electronic and photonic effects. Based on these dark regeneration experiments, we address the existing inconsistency regarding the measured linear dependence of the regeneration rate constant on the excess carrier density. Using the method of dark regeneration by current injection into the solar cell, we are able to measure the total recombination current of the solar cell at the actual regeneration temperature under applied voltage, i.e., at the physically relevant regeneration conditions. The direct comparison of the regeneration rate constant as a function of electronically injected carrier concentration in the dark and the regeneration rate constant during illumination clearly shows that the regeneration is a purely electronically stimulated effect and that photons are not directly involved.

Organisationseinheit(en)

Institut für Festkörperphysik

Externe Organisation(en)

Institut für Solarenergieforschung GmbH (ISFH)

Typ

Artikel

Journal

Solar Energy Materials and Solar Cells

Band

185

Seiten

283-286

Anzahl der Seiten

4

ISSN

0927-0248

Publikationsdatum

10.2018

Publikationsstatus

Veröffentlicht

Peer-reviewed

Ja

ASJC Scopus Sachgebiete

Elektronische, optische und magnetische Materialien, Erneuerbare Energien, Nachhaltigkeit und Umwelt, Oberflächen, Beschichtungen und Folien

Ziele für nachhaltige Entwicklung

SDG 7 – Erschwingliche und saubere Energie

Elektronische Version(en)

https://doi.org/10.1016/j.solmat.2018.05.023 (Zugang: Geschlossen)