Firing stability of tube furnace-annealed n-type poly-Si on oxide junctions
- verfasst von
- Christina Hollemann, Michael Rienäcker, Anastasia Soeriyadi, Chukwuka Madumelu, Felix Haase, Jan Krügener, Brett Hallam, Rolf Brendel, Robby Peibst
- Abstract
Stability of the passivation quality of poly-Si on oxide junctions against the conventional mainstream high-temperature screen-print firing processes is highly desirable and also expected since the poly-Si on oxide preparation occurs at higher temperatures and for longer durations than firing. We measure recombination current densities (J0) and interface state densities (Dit) of symmetrical samples with n-type poly-Si contacts before and after firing. Samples without a capping dielectric layer show a significant deterioration of the passivation quality during firing. The Dit values are (3 ± 0.2) x 1011 and (8 ± 2) x 1011 eV/cm2 when fired at 620°C and 900°C, respectively. The activation energy in an Arrhenius fit of Dit versus the firing temperature is 0.30 ± 0.03 eV. This indicates that thermally induced desorption of hydrogen from Si-H bonds at the poly-Si/SiOx interface is not the root cause of depassivation. Postfiring annealing at 425°C can improve the passivation again. Samples with SiNx capping layers show an increase in J0 up to about 100 fA/cm2 by firing, which can be attributed to blistering and is not reversed by annealing at 425°C. On the other hand, blistering does not occur in poly-Si samples capped with AlOx layers or AlOx/SiNy stacks, and J0 values of 2–5 fA/cm2 can be achieved after firing. Those findings suggest that a combination of two effects might be the root cause of the increase in J0 and Dit: thermal stress at the SiOz interface during firing and blistering. Blistering is presumed to occur when the hydrogen concentration in the capping layers exceeds a certain level.
- Organisationseinheit(en)
-
Institut für Materialien und Bauelemente der Elektronik
Laboratorium für Nano- und Quantenengineering
Institut für Festkörperphysik
- Externe Organisation(en)
-
Institut für Solarenergieforschung GmbH (ISFH)
University of New South Wales (UNSW)
- Typ
- Artikel
- Journal
- Progress in Photovoltaics: Research and Applications
- Band
- 30
- Seiten
- 49-64
- Anzahl der Seiten
- 16
- ISSN
- 1062-7995
- Publikationsdatum
- 01.2022
- Publikationsstatus
- Veröffentlicht
- Peer-reviewed
- Ja
- ASJC Scopus Sachgebiete
- Elektronische, optische und magnetische Materialien, Erneuerbare Energien, Nachhaltigkeit und Umwelt, Physik der kondensierten Materie, Elektrotechnik und Elektronik
- Ziele für nachhaltige Entwicklung
- SDG 7 – Erschwingliche und saubere Energie
- Elektronische Version(en)
-
https://doi.org/10.1002/pip.3459 (Zugang:
Offen)