Easy-to-use surface passivation technique for bulk carrier lifetime measurements on silicon wafers
- verfasst von
- Jan Schmidt, Armin G. Aberle
- Abstract
A novel, easily applicable surface passivation technique is presented, which, in combination with contactless photocoductance decay (PCD) measurements, allows a quick estimation of the bulk carrier lifetime of crystalline silicon wafers. The proposed passivation technique requires neither a chemical pre-cleaning of the silicon wafer nor expensive instrumentation. On both surfaces of the wafer a thin varnish film is deposited using a spinner. Subsequently, both surfaces of the coated silicon wafer are charged by means of a corona chamber. Using microwave-detected PCD measurements, we experimentally demonstrate that this novel surface passivation scheme provides differential surface recombination velocities in the 30-70 cm s-1 range on p-as well as n-type silicon wafers.
- Externe Organisation(en)
-
Institut für Solarenergieforschung GmbH (ISFH)
- Typ
- Artikel
- Journal
- Progress in Photovoltaics: Research and Applications
- Band
- 6
- Seiten
- 259-263
- Anzahl der Seiten
- 5
- ISSN
- 1062-7995
- Publikationsdatum
- 21.12.1998
- Publikationsstatus
- Veröffentlicht
- Peer-reviewed
- Ja
- ASJC Scopus Sachgebiete
- Elektronische, optische und magnetische Materialien, Erneuerbare Energien, Nachhaltigkeit und Umwelt, Physik der kondensierten Materie, Elektrotechnik und Elektronik
- Ziele für nachhaltige Entwicklung
- SDG 7 – Erschwingliche und saubere Energie
- Elektronische Version(en)
-
https://doi.org/10.1002/(SICI)1099-159X(199807/08)6:4<259::AID-PIP215>3.0.CO;2-Z (Zugang:
Geschlossen)