The elasticity method

A new approach to determine recombination parameters from injection dependent carrier lifetimes of silicon wafers

Authored by

Daniel Beck, Michael Winter, Jan Schmidt

Abstract

The elasticity E of a function f(x) is a mathematical operator, which can be understood as the slope of the function plotted in a log-log-plot. We analyze the elasticity E(τ −1(Δn + Ndop)) of injection-dependent lifetime measurements τ(Δn + Ndop) as a function of the majority carrier density Δn + Ndop. The value of the elasticity provides information on the recombination mechanism in the respective injection range. For example, at injection levels where E = 1, surface recombination characterized by a surface recombination current density J0 is limiting the overall recombination. Furthermore, Shockley-Read-Hall (SRH) recombination via a deep-level impurity state within the silicon bulk always leads to E(τSRH(Δn + Ndop)) > 0 and for Δn approaching zero, the elasticity exactly equals the ratio of capture time constants Q and hence provides an alternative way for its determination within a narrow injection range. Two different cases are studied experimentally: (i) Very low J0 values (1 fA/cm2) are analyzed on silicon wafers symmetrically passivated with polycrystalline silicon layers on ultrathin silicon oxide, where the analysis of the injection-dependent lifetime curves is performed in the elasticity range (1.0 ± 0.1). (ii) Two different types of light-induced bulk defects, namely the boron-oxygen center (BO) and the light- and elevated-temperature-induced degradation (LeTID) defect are investigated. The extracted Q values show excellent agreement with those values determined from fitting the SRH equation to the complete τ(Δn) curves.

Details

Organisation(s)
Institute of Solid State Physics
Solar Energy Section
External Organisation(s)
Institute for Solar Energy Research (ISFH)
Type
Article
Journal
Solar Energy Materials and Solar Cells
Volume
292
ISSN
0927-0248
Publication date
15.10.2025
Publication status
Published
Peer reviewed
Yes
ASJC Scopus subject areas
Electronic, Optical and Magnetic Materials, Renewable Energy, Sustainability and the Environment, Surfaces, Coatings and Films
Sustainable Development Goals
SDG 7 - Affordable and Clean Energy
Electronic version(s)
https://doi.org/10.1016/j.solmat.2025.113823 (Access: Closed )