Experimental Comparison of Active Gate Drivers for Drive Inverters Using SiC MOSFETs
Abstract
Wide-bandgap power semiconductors such as silicon carbide enable faster switching speeds and reduce switching losses compared to silicon switches. However, the fast switching transients can damage the insulation of electric machines and generate currents in the parasitic capacitances of a drive system which can cause high electromagnetic signatures. Conventional solutions such as larger gate resistances or output filters are often inefficient. Active gate drivers (AGDs), which variably adjust the switching speed, can offer an alternative. In this context, a variety of concepts exist. In this paper, two AGDs with differing complexity and flexibility are compared to a conventional gate driver. This allows an assessment of the level of complexity required in a gate driver to achieve specific objectives. Double pulse tests show a reduction in turn-on losses and the possibility of limiting the turn-off voltage peak when utilizing either of the two AGDs, while a significant reduction in turn-off losses can only be achieved by the more complex AGD.
Details
- Organisation(s)
-
Institute of Drive Systems and Power Electronics
- Type
- Conference contribution
- No. of pages
- 7
- Publication date
- 19.10.2025
- Publication status
- Published
- Peer reviewed
- Yes
- ASJC Scopus subject areas
- Energy Engineering and Power Technology, Renewable Energy, Sustainability and the Environment, Electrical and Electronic Engineering
- Sustainable Development Goals
- SDG 7 - Affordable and Clean Energy
- Electronic version(s)
-
https://doi.org/10.1109/ECCE58356.2025.11259911 (Access:
Closed
)
